All MOSFET. PTD4N60 Datasheet

 

PTD4N60 Datasheet and Replacement


   Type Designator: PTD4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO252
 

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PTD4N60 Datasheet (PDF)

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PTD4N60

PTD4N60 N-Channel MOSFETFeatures 2. DrainSymbol RDS(on) (Max 2.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (150C) 3. Source TO-252(D-PAK)213Absolute Maximum RatingsSymbol Par

Datasheet: PT8810 , PT9435 , PTD12N10 , PTD15N10 , PTD20N06 , PTD3004 , PTD3006 , PTD4080B , 2SK3878 , PTD50N06 , PTD60N02 , PTD7N65 , PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 .

History: SI7192DP | RU2020H | LRC6N33YT1G | HSBB02P15

Keywords - PTD4N60 MOSFET datasheet

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