PTD4N60 Datasheet. Specs and Replacement
Type Designator: PTD4N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO252
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PTD4N60 substitution
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PTD4N60 datasheet
ptd4n60.pdf
PTD4N60 N-Channel MOSFET Features 2. Drain Symbol RDS(on) (Max 2.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (150 C) 3. Source TO-252(D-PAK) 2 1 3 Absolute Maximum Ratings Symbol Par... See More ⇒
Detailed specifications: PT8810, PT9435, PTD12N10, PTD15N10, PTD20N06, PTD3004, PTD3006, PTD4080B, 8205A, PTD50N06, PTD60N02, PTD7N65, PTD80N06, PTF10N65, PTF10HN08, PTY10HN08, PTF12N65
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