PTD50N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTD50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 5.1 nS
Cossⓘ - Output Capacitance: 158 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
PTD50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTD50N06 Datasheet (PDF)
ptd50n06.pdf
PTD50N06 60V/50A N-Channel Advanced Power MOSFET Features General Features Low On-Resistance VDS =60V,ID =50A Fast Switching RDS(ON)
mptd50n60n.pdf
MPTD50N60NFEATURES BVDSS=60V, ID=50A RDS(on): 17m(Max)@VGS=10V RDS(on): 20m(Max)@VGS=4.5V100% avalanche testedTO-252 RoHS compliantAPPLICATIONS Load Switch Power Management Motor Drive ApplicationDevice Marking and Package InformationOrdering code Package MarkingMPTD50N60N TO-252 MPTD50N60NAbsolute Maximum Ratings TC = 25 unless otherw
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
