All MOSFET. PTD50N06 Datasheet

 

PTD50N06 Datasheet and Replacement


   Type Designator: PTD50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252
 

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PTD50N06 Datasheet (PDF)

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PTD50N06

PTD50N06 60V/50A N-Channel Advanced Power MOSFET Features General Features Low On-Resistance VDS =60V,ID =50A Fast Switching RDS(ON)

 8.1. Size:1532K  cn marching-power
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PTD50N06

MPTD50N60NFEATURES BVDSS=60V, ID=50A RDS(on): 17m(Max)@VGS=10V RDS(on): 20m(Max)@VGS=4.5V100% avalanche testedTO-252 RoHS compliantAPPLICATIONS Load Switch Power Management Motor Drive ApplicationDevice Marking and Package InformationOrdering code Package MarkingMPTD50N60N TO-252 MPTD50N60NAbsolute Maximum Ratings TC = 25 unless otherw

Datasheet: PT9435 , PTD12N10 , PTD15N10 , PTD20N06 , PTD3004 , PTD3006 , PTD4080B , PTD4N60 , STP75NF75 , PTD60N02 , PTD7N65 , PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 .

History: MS65R170C | SI2307BDS

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