PTD50N06 Datasheet. Specs and Replacement
Type Designator: PTD50N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.1 nS
Cossⓘ - Output Capacitance: 158 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
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PTD50N06 substitution
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PTD50N06 datasheet
ptd50n06.pdf
PTD50N06 60V/50A N-Channel Advanced Power MOSFET Features General Features Low On-Resistance VDS =60V,ID =50A Fast Switching RDS(ON) ... See More ⇒
mptd50n60n.pdf
MPTD50N60N FEATURES BVDSS=60V, ID=50A RDS(on) 17m (Max)@VGS=10V RDS(on) 20m (Max)@VGS=4.5V 100% avalanche tested TO-252 RoHS compliant APPLICATIONS Load Switch Power Management Motor Drive Application Device Marking and Package Information Ordering code Package Marking MPTD50N60N TO-252 MPTD50N60N Absolute Maximum Ratings TC = 25 unless otherw... See More ⇒
Detailed specifications: PT9435, PTD12N10, PTD15N10, PTD20N06, PTD3004, PTD3006, PTD4080B, PTD4N60, 7N65, PTD60N02, PTD7N65, PTD80N06, PTF10N65, PTF10HN08, PTY10HN08, PTF12N65, PTF13N50
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