PTD50N06 Spec and Replacement
Type Designator: PTD50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5.1 nS
Cossⓘ - Output Capacitance: 158 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
PTD50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTD50N06 Specs
ptd50n06.pdf
PTD50N06 60V/50A N-Channel Advanced Power MOSFET Features General Features Low On-Resistance VDS =60V,ID =50A Fast Switching RDS(ON) ... See More ⇒
mptd50n60n.pdf
MPTD50N60N FEATURES BVDSS=60V, ID=50A RDS(on) 17m (Max)@VGS=10V RDS(on) 20m (Max)@VGS=4.5V 100% avalanche tested TO-252 RoHS compliant APPLICATIONS Load Switch Power Management Motor Drive Application Device Marking and Package Information Ordering code Package Marking MPTD50N60N TO-252 MPTD50N60N Absolute Maximum Ratings TC = 25 unless otherw... See More ⇒
Detailed specifications: PT9435 , PTD12N10 , PTD15N10 , PTD20N06 , PTD3004 , PTD3006 , PTD4080B , PTD4N60 , 7N65 , PTD60N02 , PTD7N65 , PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 .
History: MTP3055VL
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