All MOSFET. PTD50N06 Datasheet

 

PTD50N06 Datasheet and Replacement


   Type Designator: PTD50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252
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PTD50N06 Datasheet (PDF)

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PTD50N06

PTD50N06 60V/50A N-Channel Advanced Power MOSFET Features General Features Low On-Resistance VDS =60V,ID =50A Fast Switching RDS(ON)

 8.1. Size:1532K  cn marching-power
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PTD50N06

MPTD50N60NFEATURES BVDSS=60V, ID=50A RDS(on): 17m(Max)@VGS=10V RDS(on): 20m(Max)@VGS=4.5V100% avalanche testedTO-252 RoHS compliantAPPLICATIONS Load Switch Power Management Motor Drive ApplicationDevice Marking and Package InformationOrdering code Package MarkingMPTD50N60N TO-252 MPTD50N60NAbsolute Maximum Ratings TC = 25 unless otherw

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700

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