PTD60N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTD60N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
PTD60N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTD60N02 Datasheet (PDF)
ptd60n02.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PTD60N0 2 20V N-Channel Enhancement Mode MOSFET0V NDescription The PTD60N02 uses advanced trench technologyto provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protection or in other Switching application. General FeaturesV = 20V I =60 A DS DR
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![PTD60N02](https://alltransistors.com/images/us.png)
![PTD60N02](https://alltransistors.com/images/es.png)
![PTD60N02](https://alltransistors.com/images/ru.png)
LIST
Last Update
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C