PTD60N02 Datasheet. Specs and Replacement
Type Designator: PTD60N02 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
📄📄 Copy
PTD60N02 substitution
- MOSFET ⓘ Cross-Reference Search
PTD60N02 datasheet
ptd60n02.pdf
PTD60N0 2 20V N-Channel Enhancement Mode MOSFET 0V N Description The PTD60N02 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =60 A DS D R ... See More ⇒
Detailed specifications: PTD12N10, PTD15N10, PTD20N06, PTD3004, PTD3006, PTD4080B, PTD4N60, PTD50N06, IRFP250N, PTD7N65, PTD80N06, PTF10N65, PTF10HN08, PTY10HN08, PTF12N65, PTF13N50, PTF2N65
Keywords - PTD60N02 MOSFET specs
PTD60N02 cross reference
PTD60N02 equivalent finder
PTD60N02 pdf lookup
PTD60N02 substitution
PTD60N02 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
