PTD80N06 Datasheet. Specs and Replacement

Type Designator: PTD80N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

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PTD80N06 datasheet

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PTD80N06

PTD80N06 60V/80A N-Chnnel MOSFET Features D 60V/80A RDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D % 100 Avalanche Tested Application G S Power Supply TO-252 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (TA=25... See More ⇒

Detailed specifications: PTD20N06, PTD3004, PTD3006, PTD4080B, PTD4N60, PTD50N06, PTD60N02, PTD7N65, IRF9540, PTF10N65, PTF10HN08, PTY10HN08, PTF12N65, PTF13N50, PTF2N65, PTF5N65, PTF7N65

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