All MOSFET. PTD80N06 Datasheet

 

PTD80N06 Datasheet and Replacement


   Type Designator: PTD80N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

 PTD80N06 substitution

   - MOSFET ⓘ Cross-Reference Search

 

PTD80N06 Datasheet (PDF)

 ..1. Size:3557K  cn puolop
 ptd80n06.pdf pdf_icon

PTD80N06

PTD80N0660V/80A N-Chnnel MOSFETFeaturesD 60V/80ARDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D% 100 Avalanche TestedApplicationG S Power SupplyTO-252 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (TA=25

Datasheet: PTD20N06 , PTD3004 , PTD3006 , PTD4080B , PTD4N60 , PTD50N06 , PTD60N02 , PTD7N65 , AO3400 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 , PTF7N65 .

History: IPAN60R210PFD7S

Keywords - PTD80N06 MOSFET datasheet

 PTD80N06 cross reference
 PTD80N06 equivalent finder
 PTD80N06 lookup
 PTD80N06 substitution
 PTD80N06 replacement

 

 
Back to Top

 


 
.