PTD80N06 Spec and Replacement
Type Designator: PTD80N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
PTD80N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTD80N06 Specs
ptd80n06.pdf
PTD80N06 60V/80A N-Chnnel MOSFET Features D 60V/80A RDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D % 100 Avalanche Tested Application G S Power Supply TO-252 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (TA=25... See More ⇒
Detailed specifications: PTD20N06 , PTD3004 , PTD3006 , PTD4080B , PTD4N60 , PTD50N06 , PTD60N02 , PTD7N65 , IRF9540 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 , PTF7N65 .
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