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PTF12N65 Spec and Replacement


   Type Designator: PTF12N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F

 PTF12N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTF12N65 Specs

 ..1. Size:7543K  cn puolop
 ptf12n65.pdf pdf_icon

PTF12N65

PTF1 2N65 65 0V/1 2A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 0.5 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above... See More ⇒

 8.1. Size:391K  pipsemi
 ptf12n90.pdf pdf_icon

PTF12N65

PTF12N90 900V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 900V 750m 12A RDS(ON),typ.=750 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder G High Efficiency SMPS D S Ordering Information Part Number Package Brand TO-247 Package PT... See More ⇒

Detailed specifications: PTD4N60 , PTD50N06 , PTD60N02 , PTD7N65 , PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 , 2N7002 , PTF13N50 , PTF2N65 , PTF5N65 , PTF7N65 , PTF8N65 , PTN3006 , PTN30P03 , PTP10HN10 .

History: 2SK3646-01S | TF2317 | ZVN3306FTC

Keywords - PTF12N65 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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