All MOSFET. PTF12N65 Datasheet

 

PTF12N65 Datasheet and Replacement


   Type Designator: PTF12N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F
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PTF12N65 Datasheet (PDF)

 ..1. Size:7543K  cn puolop
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PTF12N65

PTF1 2N6565 0V/1 2A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 0.5 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above

 8.1. Size:391K  pipsemi
 ptf12n90.pdf pdf_icon

PTF12N65

PTF12N90 900V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 900V 750m 12A RDS(ON),typ.=750 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder G High Efficiency SMPS D S Ordering Information Part Number Package Brand TO-247 Package PT

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History: FQI17N08LTU | PMFPB8040XP | FTK50P03PDFN56 | SSF8NP60U | BBL4001

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