PTF13N50 Datasheet. Specs and Replacement

Type Designator: PTF13N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm

Package: TO220F

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PTF13N50 datasheet

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PTF13N50

PTF1 3 N5 0 5 00V/1 3 A N-Channel A dv anced Power MOSFET Features )@VGS=10V RDS(on) (Typical 0.44 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation... See More ⇒

Detailed specifications: PTD50N06, PTD60N02, PTD7N65, PTD80N06, PTF10N65, PTF10HN08, PTY10HN08, PTF12N65, IRF9540N, PTF2N65, PTF5N65, PTF7N65, PTF8N65, PTN3006, PTN30P03, PTP10HN10, PTP12HN06

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