All MOSFET. PTF13N50 Datasheet

 

PTF13N50 Datasheet and Replacement


   Type Designator: PTF13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO220F
 

 PTF13N50 substitution

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PTF13N50 Datasheet (PDF)

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PTF13N50

PTF1 3 N5 05 00V/1 3 A N-Channel A dv anced Power MOSFETFeatures )@VGS=10V RDS(on) (Typical 0.44 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation

Datasheet: PTD50N06 , PTD60N02 , PTD7N65 , PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , IRF1010E , PTF2N65 , PTF5N65 , PTF7N65 , PTF8N65 , PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 .

History: OSG70R1K4FF | PMZ320UPE | IXTA4N150HV | SLD60R380S2

Keywords - PTF13N50 MOSFET datasheet

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