All MOSFET. PTF2N65 Datasheet

 

PTF2N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PTF2N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.6 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO220F

 PTF2N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTF2N65 Datasheet (PDF)

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 ptf2n65.pdf

PTF2N65 PTF2N65

PTF2N6565 0V/2A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 4.9 )@VGS=30V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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