PTF2N65 PDF and Equivalents Search

 

PTF2N65 Specs and Replacement


   Type Designator: PTF2N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO220F
 

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PTF2N65 datasheet

 ..1. Size:6259K  cn puolop
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PTF2N65

PTF2N65 65 0V/2A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 4.9 )@VGS=30V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the... See More ⇒

Detailed specifications: PTD60N02 , PTD7N65 , PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 , IRF4905 , PTF5N65 , PTF7N65 , PTF8N65 , PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 , PTY12HN06 .

History: TSM4NB60CZ | DHP035N04 | DMG1016UDW | TPCS8211 | STS6409 | SDF120JAA-D | FQPF44N08T

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