PTF2N65 Specs and Replacement
Type Designator: PTF2N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: TO220F
PTF2N65 substitution
- MOSFET ⓘ Cross-Reference Search
PTF2N65 datasheet
ptf2n65.pdf
PTF2N65 65 0V/2A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 4.9 )@VGS=30V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the... See More ⇒
Detailed specifications: PTD60N02, PTD7N65, PTD80N06, PTF10N65, PTF10HN08, PTY10HN08, PTF12N65, PTF13N50, IRF4905, PTF5N65, PTF7N65, PTF8N65, PTN3006, PTN30P03, PTP10HN10, PTP12HN06, PTY12HN06
Keywords - PTF2N65 MOSFET specs
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