PTF5N65 Datasheet. Specs and Replacement

Type Designator: PTF5N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO220F

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PTF5N65 datasheet

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PTF5N65

PTF5 N65 65 0V/5 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 1.9 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t... See More ⇒

Detailed specifications: PTD7N65, PTD80N06, PTF10N65, PTF10HN08, PTY10HN08, PTF12N65, PTF13N50, PTF2N65, IRLB4132, PTF7N65, PTF8N65, PTN3006, PTN30P03, PTP10HN10, PTP12HN06, PTY12HN06, PTP4N60

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