PTN3006 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTN3006
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PDFN5X6
PTN3006 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTN3006 Datasheet (PDF)
ptn3006.pdf
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PTN3006 30V/80A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=250A 30 -- -- V V(BR)DSS Zero Gate Voltage Drain current(Tc=25) VDS=24V,VGS=0V -- -- 1 A IDSS Zero Gate Voltage Drain Current(Tc=125) VDS=24V,VGS=0V -- -- 100
ptn30p03.pdf
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PTN30P03-30V/-30A P-Channel Advanced Power MOSFETFeatures BVDSS -30 V - 4.5V Logic Level Control ID -30 A PDFN3333 SMD Package mRDSON@VGS=-10V 9Applications RDSON@VGS=-5V 13 m High Side Load Switch Battery Switch Optimized for Power Management Applications for Portable Products, such as Aeromodelling, Power bank,Brushless motor, Main board
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