All MOSFET. PTY12HN06 Datasheet

 

PTY12HN06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PTY12HN06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 521 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO263

 PTY12HN06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTY12HN06 Datasheet (PDF)

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 ptp12hn06 pty12hn06.pdf

PTY12HN06 PTY12HN06

PTP12HN06/PTY12HN0660V/65AN-ChnnelMOSFET60V/120A N-Chnnel MOSFETFeatures 60V/120AA DRDS(ON)=4.2m VGS=10V (typ.)@ V Lead fre en Device Aee and Gree Available Low Rds ductive Loss Gs-on to Minimize Cond s High ava urrent alanche CuS% 100 Avalanche TestedDApplication Power SupplyG S DC-DC Converters UPS TO-

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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