PTY12HN06 Spec and Replacement
Type Designator: PTY12HN06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 521 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: TO263
PTY12HN06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTY12HN06 Specs
ptp12hn06 pty12hn06.pdf
PTP12HN06/PTY12HN06 60V/65AN-ChnnelMOSFET 60V/120A N-Chnnel MOSFET Features 60V/120A A D RDS(ON)=4.2m VGS=10V (typ.)@ V Lead fre en Device A ee and Gree Available Low Rds ductive Loss G s-on to Minimize Cond s High ava urrent alanche Cu S % 100 Avalanche Tested D Application Power Supply G S DC-DC Converters UPS TO-... See More ⇒
Detailed specifications: PTF2N65 , PTF5N65 , PTF7N65 , PTF8N65 , PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 , K4145 , PTP4N60 , PTF4N60 , PDB1216E , PDB3010H , PDC2306Z , PDC2603Z , PDC2604Z , PDC3801R .
History: RJK0390DPA | F4N60
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