All MOSFET. PTY12HN06 Datasheet

 

PTY12HN06 Datasheet and Replacement


   Type Designator: PTY12HN06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 521 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO263
 

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PTY12HN06 Datasheet (PDF)

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PTY12HN06

PTP12HN06/PTY12HN0660V/65AN-ChnnelMOSFET60V/120A N-Chnnel MOSFETFeatures 60V/120AA DRDS(ON)=4.2m VGS=10V (typ.)@ V Lead fre en Device Aee and Gree Available Low Rds ductive Loss Gs-on to Minimize Cond s High ava urrent alanche CuS% 100 Avalanche TestedDApplication Power SupplyG S DC-DC Converters UPS TO-

Datasheet: PTF2N65 , PTF5N65 , PTF7N65 , PTF8N65 , PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 , IRFB3607 , PTP4N60 , PTF4N60 , PDB1216E , PDB3010H , PDC2306Z , PDC2603Z , PDC2604Z , PDC3801R .

History: LNH045R210 | PK555BA | CS12N65FA9R | QS8M51 | 25N10L-TF3-T | IRFP440R | MME70R380PRH

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