All MOSFET. PTP4N60 Datasheet

 

PTP4N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PTP4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 109 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.2 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220

 PTP4N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTP4N60 Datasheet (PDF)

 ..1. Size:1946K  cn puolop
ptp4n60 ptf4n60.pdf

PTP4N60 PTP4N60

PTP4 N60/PTF4 N60600V/4 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D S G D STO-220 TO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functio

 8.1. Size:3237K  cn puolop
ptp4n65 ptf4n65.pdf

PTP4N60 PTP4N60

PTP4 N65 /PTF4 N6565 0V/4 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D S G D STO-220 TO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Funct

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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