All MOSFET. PTF4N60 Datasheet

 

PTF4N60 Datasheet and Replacement


   Type Designator: PTF4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220F
 

 PTF4N60 substitution

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PTF4N60 Datasheet (PDF)

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 ptp4n60 ptf4n60.pdf pdf_icon

PTF4N60

PTP4 N60/PTF4 N60600V/4 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D S G D STO-220 TO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functio

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 ptp4n65 ptf4n65.pdf pdf_icon

PTF4N60

PTP4 N65 /PTF4 N6565 0V/4 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D S G D STO-220 TO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Funct

Datasheet: PTF7N65 , PTF8N65 , PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 , PTY12HN06 , PTP4N60 , RFP50N06 , PDB1216E , PDB3010H , PDC2306Z , PDC2603Z , PDC2604Z , PDC3801R , PDC3803R , PDC3810V .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - PTF4N60 MOSFET datasheet

 PTF4N60 cross reference
 PTF4N60 equivalent finder
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