PTF4N60 Datasheet. Specs and Replacement
Type Designator: PTF4N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO220F
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PTF4N60 substitution
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PTF4N60 datasheet
ptp4n60 ptf4n60.pdf
PTP4 N60/PTF4 N60 600V/4 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S G D S TO-220 TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functio... See More ⇒
ptp4n65 ptf4n65.pdf
PTP4 N65 /PTF4 N65 65 0V/4 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S G D S TO-220 TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Funct... See More ⇒
Detailed specifications: PTF7N65, PTF8N65, PTN3006, PTN30P03, PTP10HN10, PTP12HN06, PTY12HN06, PTP4N60, AON7410, PDB1216E, PDB3010H, PDC2306Z, PDC2603Z, PDC2604Z, PDC3801R, PDC3803R, PDC3810V
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