PDB1216E Spec and Replacement
Type Designator: PDB1216E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: DFN2X2-6L
PDB1216E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDB1216E Specs
pdb1216e.pdf
12V Dual N-Channel MOSFETs PDB1216E General Description BVDSS RDSON ID These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. 12V 23m 6A This advanced technology has been especially tailored to minimize on-state resistance, provide superior Features switching performance, and withstand high energy 12V,6A, RDS(ON) =2... See More ⇒
Detailed specifications: PTF8N65 , PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 , 12N60 , PDB3010H , PDC2306Z , PDC2603Z , PDC2604Z , PDC3801R , PDC3803R , PDC3810V , PDC3902X .
History: AP13P15GS | IPP530N15N3G
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