PDB1216E Datasheet. Specs and Replacement
Type Designator: PDB1216E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: DFN2X2-6L
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PDB1216E substitution
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PDB1216E datasheet
pdb1216e.pdf
12V Dual N-Channel MOSFETs PDB1216E General Description BVDSS RDSON ID These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. 12V 23m 6A This advanced technology has been especially tailored to minimize on-state resistance, provide superior Features switching performance, and withstand high energy 12V,6A, RDS(ON) =2... See More ⇒
Detailed specifications: PTF8N65, PTN3006, PTN30P03, PTP10HN10, PTP12HN06, PTY12HN06, PTP4N60, PTF4N60, 12N60, PDB3010H, PDC2306Z, PDC2603Z, PDC2604Z, PDC3801R, PDC3803R, PDC3810V, PDC3902X
Keywords - PDB1216E MOSFET specs
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