PDC2306Z Spec and Replacement
Type Designator: PDC2306Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: PPAK3X3
PDC2306Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDC2306Z Specs
pdc2306z.pdf
20V N-Channel MOSFETs PDC2306Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 5.4m 65A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,65A, RDS(ON) =5.4m @VGS = 4.5V performance, and withstand high e... See More ⇒
Detailed specifications: PTN30P03 , PTP10HN10 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 , PDB1216E , PDB3010H , IRF1010E , PDC2603Z , PDC2604Z , PDC3801R , PDC3803R , PDC3810V , PDC3902X , PDC3903X , PDC3903Z .
History: AP4435A | AP4406A | FBM80N70P | HM7N60F | F4N60 | RJK0390DPA | JCS8N60C
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
