All MOSFET. PDC2306Z Datasheet

 

PDC2306Z Datasheet and Replacement


   Type Designator: PDC2306Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: PPAK3X3
 

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PDC2306Z Datasheet (PDF)

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PDC2306Z

20V N-Channel MOSFETs PDC2306Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 5.4m 65A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,65A, RDS(ON) =5.4m @VGS = 4.5V performance, and withstand high e

Datasheet: PTN30P03 , PTP10HN10 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 , PDB1216E , PDB3010H , IRF530 , PDC2603Z , PDC2604Z , PDC3801R , PDC3803R , PDC3810V , PDC3902X , PDC3903X , PDC3903Z .

History: OSG70R1K4FF | IXTA4N150HV | SLD60R380S2

Keywords - PDC2306Z MOSFET datasheet

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