PDC2306Z Datasheet. Specs and Replacement

Type Designator: PDC2306Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: PPAK3X3

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PDC2306Z datasheet

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PDC2306Z

20V N-Channel MOSFETs PDC2306Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 5.4m 65A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,65A, RDS(ON) =5.4m @VGS = 4.5V performance, and withstand high e... See More ⇒

Detailed specifications: PTN30P03, PTP10HN10, PTP12HN06, PTY12HN06, PTP4N60, PTF4N60, PDB1216E, PDB3010H, IRF1010E, PDC2603Z, PDC2604Z, PDC3801R, PDC3803R, PDC3810V, PDC3902X, PDC3903X, PDC3903Z

Keywords - PDC2306Z MOSFET specs

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