All MOSFET. PDC2603Z Datasheet

 

PDC2603Z Datasheet and Replacement


   Type Designator: PDC2603Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PPAK3X3
 

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PDC2603Z Datasheet (PDF)

 ..1. Size:1040K  potens
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PDC2603Z

20V P-Channel MOSFETs PDC2603Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 8m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-60A, RDS(ON) =8m@VGS = -4.5V performance, and withstand high e

 8.1. Size:462K  potens
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PDC2603Z

20V N-Channel MOSFETs PDC2604Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 3.5m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 20V,80A, RDS(ON) =3.5m@VGS = 10V performance, and withstand high energ

Datasheet: PTP10HN10 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 , PDB1216E , PDB3010H , PDC2306Z , AON7506 , PDC2604Z , PDC3801R , PDC3803R , PDC3810V , PDC3902X , PDC3903X , PDC3903Z , PDC3904Z .

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