PDC2603Z Datasheet. Specs and Replacement

Type Designator: PDC2603Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: PPAK3X3

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PDC2603Z datasheet

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PDC2603Z

20V P-Channel MOSFETs PDC2603Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 8m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-60A, RDS(ON) =8m @VGS = -4.5V performance, and withstand high e... See More ⇒

 8.1. Size:462K  potens
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PDC2603Z

20V N-Channel MOSFETs PDC2604Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 3.5m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 20V,80A, RDS(ON) =3.5m @VGS = 10V performance, and withstand high energ... See More ⇒

Detailed specifications: PTP10HN10, PTP12HN06, PTY12HN06, PTP4N60, PTF4N60, PDB1216E, PDB3010H, PDC2306Z, IRFB3607, PDC2604Z, PDC3801R, PDC3803R, PDC3810V, PDC3902X, PDC3903X, PDC3903Z, PDC3904Z

Keywords - PDC2603Z MOSFET specs

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