STW8N80 Datasheet and Replacement
Type Designator: STW8N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO247
STW8N80 substitution
STW8N80 Datasheet (PDF)
stw8nc90z.pdf

STW8NC90ZN-CHANNEL 900V - 1.1 - 7.6A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW8NC90Z 900 V
stw8nb100.pdf

STW8NB100N-CHANNEL 1000V - 1.3 - 7.3ATO-247PowerMesh MOSFETTYPE VDSS RDS(on) IDSTW8NB100 1000V
Datasheet: STW15N50 , STW15NA50 , STW16N40 , STW20NA50 , STW55N10 , STW60N10 , STW75N06 , STW80N05 , IRF540 , STW9NA60 , TA17632 , TA17650 , TA17656 , TA75307 , TA75309 , TA75321 , TA75329 .
History: BSC032N04LS
Keywords - STW8N80 MOSFET datasheet
STW8N80 cross reference
STW8N80 equivalent finder
STW8N80 lookup
STW8N80 substitution
STW8N80 replacement
History: BSC032N04LS



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