STW8N80 Specs and Replacement
Type Designator: STW8N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO247
STW8N80 substitution
- MOSFET ⓘ Cross-Reference Search
STW8N80 datasheet
stw8nc90z.pdf
STW8NC90Z N-CHANNEL 900V - 1.1 - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STW8NC90Z 900 V ... See More ⇒
stw8nb100.pdf
STW8NB100 N-CHANNEL 1000V - 1.3 - 7.3ATO-247 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB100 1000V ... See More ⇒
Detailed specifications: STW15N50, STW15NA50, STW16N40, STW20NA50, STW55N10, STW60N10, STW75N06, STW80N05, IRF540N, STW9NA60, TA17632, TA17650, TA17656, TA75307, TA75309, TA75321, TA75329
Keywords - STW8N80 MOSFET specs
STW8N80 cross reference
STW8N80 equivalent finder
STW8N80 pdf lookup
STW8N80 substitution
STW8N80 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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