STW9NA60 Specs and Replacement
Type Designator: STW9NA60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO247
STW9NA60 substitution
- MOSFET ⓘ Cross-Reference Search
STW9NA60 datasheet
stw9na60.pdf
STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA60 600 V ... See More ⇒
2sk2078 stw9na80.pdf
STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V ... See More ⇒
stw9na80.pdf
STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V ... See More ⇒
Detailed specifications: STW15NA50, STW16N40, STW20NA50, STW55N10, STW60N10, STW75N06, STW80N05, STW8N80, IRF540, TA17632, TA17650, TA17656, TA75307, TA75309, TA75321, TA75329, TA75333
Keywords - STW9NA60 MOSFET specs
STW9NA60 cross reference
STW9NA60 equivalent finder
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STW9NA60 replacement
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