All MOSFET. STW9NA60 Datasheet

 

STW9NA60 Datasheet and Replacement


   Type Designator: STW9NA60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id| ⓘ - Maximum Drain Current: 6.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 75 nC
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO247
 

 STW9NA60 substitution

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STW9NA60 Datasheet (PDF)

 ..1. Size:125K  st
 stw9na60.pdf pdf_icon

STW9NA60

STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V

 8.1. Size:132K  st
 2sk2078 stw9na80.pdf pdf_icon

STW9NA60

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

 8.2. Size:132K  st
 stw9na80.pdf pdf_icon

STW9NA60

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

 8.3. Size:147K  njs
 sth9na80fi stw9na80.pdf pdf_icon

STW9NA60

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History: NDS9952A | FDG6321C | IRF9410

Keywords - STW9NA60 MOSFET datasheet

 STW9NA60 cross reference
 STW9NA60 equivalent finder
 STW9NA60 lookup
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