STW9NA60 Datasheet and Replacement
Type Designator: STW9NA60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO247
STW9NA60 substitution
STW9NA60 Datasheet (PDF)
stw9na60.pdf
STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V
2sk2078 stw9na80.pdf
STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V
stw9na80.pdf
STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V
Datasheet: STW15NA50 , STW16N40 , STW20NA50 , STW55N10 , STW60N10 , STW75N06 , STW80N05 , STW8N80 , IRF540N , TA17632 , TA17650 , TA17656 , TA75307 , TA75309 , TA75321 , TA75329 , TA75333 .
Keywords - STW9NA60 MOSFET datasheet
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