PDC8974X Datasheet and Replacement
Type Designator: PDC8974X
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1346 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: PPAK5X6
PDC8974X substitution
PDC8974X Datasheet (PDF)
pdc8974x.pdf

80V N-Channel MOSFETs PDC8974X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 80V 3.9m 80A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 80V,80A, RDS(ON) =3.9m@VGS = 10V performance, and withstand high e
Datasheet: PDC3906Z , PDC3907Z , PDC3908X , PDC3908Z , PDC3912Z , PDC3960X , PDC3964X , PDC3964Z , IRFZ46N , PDC906Z , PDD0906 , PDD3906 , PDD3908 , PDD6902 , PDEC2210V , PDH0980 , PDH6902 .
History: BSC037N08NS5T | 2SK3414LS | JCS15N65FEI | P9006EVA | 2N65L-T6C-K | MS65R360R | NCE40H12A
Keywords - PDC8974X MOSFET datasheet
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History: BSC037N08NS5T | 2SK3414LS | JCS15N65FEI | P9006EVA | 2N65L-T6C-K | MS65R360R | NCE40H12A



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