All MOSFET. PDC8974X Datasheet

 

PDC8974X Datasheet and Replacement


   Type Designator: PDC8974X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1346 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: PPAK5X6
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PDC8974X Datasheet (PDF)

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PDC8974X

80V N-Channel MOSFETs PDC8974X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 80V 3.9m 80A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 80V,80A, RDS(ON) =3.9m@VGS = 10V performance, and withstand high e

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 15N10L-TN3-R | IRLU9343PBF | 2SK3437 | NCEP6060AGU | SIHFU9310 | VST012N06MS | 15NM70L-TF34-T

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