PDC8974X Datasheet. Specs and Replacement

Type Designator: PDC8974X  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 1346 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: PPAK5X6

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PDC8974X datasheet

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PDC8974X

80V N-Channel MOSFETs PDC8974X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 80V 3.9m 80A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 80V,80A, RDS(ON) =3.9m @VGS = 10V performance, and withstand high e... See More ⇒

Detailed specifications: PDC3906Z, PDC3907Z, PDC3908X, PDC3908Z, PDC3912Z, PDC3960X, PDC3964X, PDC3964Z, SI2302, PDC906Z, PDD0906, PDD3906, PDD3908, PDD6902, PDEC2210V, PDH0980, PDH6902

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