PDD0906 Datasheet. Specs and Replacement

Type Designator: PDD0906  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO252

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PDD0906 datasheet

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PDD0906

100V N-Channel MOSFETs PDD0906 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 90m 15A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,15A, RDS(ON) =90m @VGS = 10V performance, and withstand high e... See More ⇒

Detailed specifications: PDC3908X, PDC3908Z, PDC3912Z, PDC3960X, PDC3964X, PDC3964Z, PDC8974X, PDC906Z, 18N50, PDD3906, PDD3908, PDD6902, PDEC2210V, PDH0980, PDH6902, PDK3908, PDK6912

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