All MOSFET. PDD0906 Datasheet

 

PDD0906 Datasheet and Replacement


   Type Designator: PDD0906
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

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PDD0906 Datasheet (PDF)

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PDD0906

100V N-Channel MOSFETs PDD0906 General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 90m 15A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,15A, RDS(ON) =90m@VGS = 10V performance, and withstand high e

Datasheet: PDC3908X , PDC3908Z , PDC3912Z , PDC3960X , PDC3964X , PDC3964Z , PDC8974X , PDC906Z , 75N75 , PDD3906 , PDD3908 , PDD6902 , PDEC2210V , PDH0980 , PDH6902 , PDK3908 , PDK6912 .

History: AP4543GEH-HF | TSM75N75CZ | AOE6932 | PDN2309S | NCE60N1K0I

Keywords - PDD0906 MOSFET datasheet

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