All MOSFET. PDD0906 Datasheet

 

PDD0906 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PDD0906
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.3 nC
   trⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252

 PDD0906 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDD0906 Datasheet (PDF)

 ..1. Size:414K  potens
 pdd0906.pdf

PDD0906 PDD0906

100V N-Channel MOSFETs PDD0906 General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 90m 15A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,15A, RDS(ON) =90m@VGS = 10V performance, and withstand high e

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE0104AN | 2N7272H1 | NCE0157D

 

 
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