PDD0906 MOSFET. Datasheet pdf. Equivalent
Type Designator: PDD0906
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.3 nC
trⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO252
PDD0906 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDD0906 Datasheet (PDF)
..1. Size:414K potens
pdd0906.pdf
pdd0906.pdf
100V N-Channel MOSFETs PDD0906 General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 90m 15A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,15A, RDS(ON) =90m@VGS = 10V performance, and withstand high e
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