PDD3906 Datasheet. Specs and Replacement

Type Designator: PDD3906  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

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PDD3906 datasheet

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PDD3906

PDD3906 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 80A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,80A, RDS(ON) =6m @VGS = 10V performance, and withstand high energ... See More ⇒

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PDD3906

30V N-Channel MOSFETs PDD3908 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 9m 55A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,55A, RDS(ON) =9m @VGS = 10V performance, and withstand high energ... See More ⇒

Detailed specifications: PDC3908Z, PDC3912Z, PDC3960X, PDC3964X, PDC3964Z, PDC8974X, PDC906Z, PDD0906, 20N50, PDD3908, PDD6902, PDEC2210V, PDH0980, PDH6902, PDK3908, PDK6912, PDN2309S

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