All MOSFET. PDD3906 Datasheet

 

PDD3906 Datasheet and Replacement


   Type Designator: PDD3906
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO252
 

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PDD3906 Datasheet (PDF)

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PDD3906

PDD3906 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 80A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,80A, RDS(ON) =6m@VGS = 10V performance, and withstand high energ

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PDD3906

30V N-Channel MOSFETs PDD3908 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 9m 55A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,55A, RDS(ON) =9m@VGS = 10V performance, and withstand high energ

Datasheet: PDC3908Z , PDC3912Z , PDC3960X , PDC3964X , PDC3964Z , PDC8974X , PDC906Z , PDD0906 , 2N60 , PDD3908 , PDD6902 , PDEC2210V , PDH0980 , PDH6902 , PDK3908 , PDK6912 , PDN2309S .

History: IRF7910PBF-1 | PHD18NQ10T | AFN4172WSS8 | LSB65R125HT | RT3K11M | H02N60SI | P1260AT

Keywords - PDD3906 MOSFET datasheet

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