PDN4911S Datasheet. Specs and Replacement

Type Designator: PDN4911S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: SOT23-3S

  📄📄 Copy 

PDN4911S substitution

- MOSFET ⓘ Cross-Reference Search

 

PDN4911S datasheet

 ..1. Size:832K  potens
 pdn4911s.pdf pdf_icon

PDN4911S

40V P-Channel MOSFETs PDN4911S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -40V 68m -2.9A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -40V,-2.9A, RDS(ON) =68m @VGS = -10V performance, and withstand hig... See More ⇒

Detailed specifications: PDN2313S, PDN2318S, PDN3611S, PDN3612S, PDN3909S, PDN3912S, PDN3914S, PDN3916S, IRFB7545, PDN6911S, PDP0959, PDP0980, PDP3960, PDQ3714, PDS3712, PDS3807, PDS3812

Keywords - PDN4911S MOSFET specs

 PDN4911S cross reference

 PDN4911S equivalent finder

 PDN4911S pdf lookup

 PDN4911S substitution

 PDN4911S replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.