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PDN4911S Spec and Replacement


   Type Designator: PDN4911S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SOT23-3S

 PDN4911S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDN4911S Specs

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PDN4911S

40V P-Channel MOSFETs PDN4911S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -40V 68m -2.9A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -40V,-2.9A, RDS(ON) =68m @VGS = -10V performance, and withstand hig... See More ⇒

Detailed specifications: PDN2313S , PDN2318S , PDN3611S , PDN3612S , PDN3909S , PDN3912S , PDN3914S , PDN3916S , IRFB7545 , PDN6911S , PDP0959 , PDP0980 , PDP3960 , PDQ3714 , PDS3712 , PDS3807 , PDS3812 .

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