PDN6911S Datasheet. Specs and Replacement

Type Designator: PDN6911S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: SOT23-3S

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PDN6911S datasheet

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PDN6911S

60V P-Channel MOSFETs PDN6911S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -60V 190m -2A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -60V,-2A, RDS(ON) =190m @VGS = -10V performance, and withstand hig... See More ⇒

Detailed specifications: PDN2318S, PDN3611S, PDN3612S, PDN3909S, PDN3912S, PDN3914S, PDN3916S, PDN4911S, AON7403, PDP0959, PDP0980, PDP3960, PDQ3714, PDS3712, PDS3807, PDS3812, PDS3903

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