All MOSFET. PDN6911S Datasheet

 

PDN6911S Datasheet and Replacement


   Type Designator: PDN6911S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: SOT23-3S
 

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PDN6911S Datasheet (PDF)

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PDN6911S

60V P-Channel MOSFETs PDN6911S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -60V 190m -2A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -60V,-2A, RDS(ON) =190m@VGS = -10V performance, and withstand hig

Datasheet: PDN2318S , PDN3611S , PDN3612S , PDN3909S , PDN3912S , PDN3914S , PDN3916S , PDN4911S , EMB04N03H , PDP0959 , PDP0980 , PDP3960 , PDQ3714 , PDS3712 , PDS3807 , PDS3812 , PDS3903 .

History: BRF8N65 | IRF7530 | SMK0465I | AUIRLS3034 | 2SK1198 | SW4N60A | IRL40B209

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