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PDP0959 Spec and Replacement


   Type Designator: PDP0959
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO220

 PDP0959 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDP0959 Specs

 ..1. Size:800K  potens
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PDP0959

100V P-Channel MOSFETs PDP0959 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -100V 45m -35A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -100V,-35A, RDS(ON) 45m @VGS = -10V performance, and withstand hig... See More ⇒

 9.1. Size:776K  potens
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PDP0959

100V N-Channel MOSFETs PDP0980 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 4.2m 150A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,150A, RDS(ON) =4.2m @VGS = 10V performance, and withstand hi... See More ⇒

Detailed specifications: PDN3611S , PDN3612S , PDN3909S , PDN3912S , PDN3914S , PDN3916S , PDN4911S , PDN6911S , K2611 , PDP0980 , PDP3960 , PDQ3714 , PDS3712 , PDS3807 , PDS3812 , PDS3903 , PDS4810 .

Keywords - PDP0959 MOSFET specs

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