PDP0959 Datasheet and Replacement
Type Designator: PDP0959
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO220
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PDP0959 Datasheet (PDF)
pdp0959.pdf

100V P-Channel MOSFETs PDP0959 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -100V 45m -35A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -100V,-35A, RDS(ON) 45m@VGS = -10V performance, and withstand hig
pdp0980.pdf

100V N-Channel MOSFETs PDP0980 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 4.2m 150A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,150A, RDS(ON) =4.2m@VGS = 10V performance, and withstand hi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PTP20N70A | R6006JND3 | 1N70Z | AP30H80Q | IRF9530SMD | STL35N6F3 | SHD219303
Keywords - PDP0959 MOSFET datasheet
PDP0959 cross reference
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History: PTP20N70A | R6006JND3 | 1N70Z | AP30H80Q | IRF9530SMD | STL35N6F3 | SHD219303



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