PDP0959 Datasheet. Specs and Replacement

Type Designator: PDP0959  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO220

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PDP0959 datasheet

 ..1. Size:800K  potens
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PDP0959

100V P-Channel MOSFETs PDP0959 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -100V 45m -35A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -100V,-35A, RDS(ON) 45m @VGS = -10V performance, and withstand hig... See More ⇒

 9.1. Size:776K  potens
 pdp0980.pdf pdf_icon

PDP0959

100V N-Channel MOSFETs PDP0980 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 4.2m 150A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,150A, RDS(ON) =4.2m @VGS = 10V performance, and withstand hi... See More ⇒

Detailed specifications: PDN3611S, PDN3612S, PDN3909S, PDN3912S, PDN3914S, PDN3916S, PDN4911S, PDN6911S, K2611, PDP0980, PDP3960, PDQ3714, PDS3712, PDS3807, PDS3812, PDS3903, PDS4810

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