All MOSFET. PDP0980 Datasheet

 

PDP0980 Datasheet and Replacement


   Type Designator: PDP0980
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 275 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 1690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO220
 

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PDP0980 Datasheet (PDF)

 ..1. Size:776K  potens
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PDP0980

100V N-Channel MOSFETs PDP0980 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 4.2m 150A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,150A, RDS(ON) =4.2m@VGS = 10V performance, and withstand hi

 9.1. Size:800K  potens
 pdp0959.pdf pdf_icon

PDP0980

100V P-Channel MOSFETs PDP0959 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -100V 45m -35A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -100V,-35A, RDS(ON) 45m@VGS = -10V performance, and withstand hig

Datasheet: PDN3612S , PDN3909S , PDN3912S , PDN3914S , PDN3916S , PDN4911S , PDN6911S , PDP0959 , AO3407 , PDP3960 , PDQ3714 , PDS3712 , PDS3807 , PDS3812 , PDS3903 , PDS4810 , PDS4906 .

History: AP4501GM | JMSH0805PE | AP4036AGM-HF | AP40N03GH-HF | BUZ61

Keywords - PDP0980 MOSFET datasheet

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