All MOSFET. PDP3960 Datasheet

 

PDP3960 Datasheet and Replacement


   Type Designator: PDP3960
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 168 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 176 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 735 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO220
 

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PDP3960 Datasheet (PDF)

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PDP3960

30V N-Channel MOSFETs PDP3960 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3m 176A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 176A, RDS(ON) =3m@VGS = 10V performance, and withstand high energ

Datasheet: PDN3909S , PDN3912S , PDN3914S , PDN3916S , PDN4911S , PDN6911S , PDP0959 , PDP0980 , AON7403 , PDQ3714 , PDS3712 , PDS3807 , PDS3812 , PDS3903 , PDS4810 , PDS4906 , PDS4909 .

History: YJQ55P02A | R6015ENJ | SFP350N100C2 | 2SK3127K | SMIRF4N65TBRL | AP10C325Y | R6020ENJ

Keywords - PDP3960 MOSFET datasheet

 PDP3960 cross reference
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