All MOSFET. PDP3960 Datasheet

 

PDP3960 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PDP3960
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 168 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 176 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 735 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO220

 PDP3960 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDP3960 Datasheet (PDF)

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 pdp3960.pdf

PDP3960 PDP3960

30V N-Channel MOSFETs PDP3960 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3m 176A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 176A, RDS(ON) =3m@VGS = 10V performance, and withstand high energ

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STU616S | STV5NA50

 

 
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