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PDP3960 Specs and Replacement

Type Designator: PDP3960

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 168 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 176 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 735 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO220

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PDP3960 datasheet

 ..1. Size:742K  potens
 pdp3960.pdf pdf_icon

PDP3960

30V N-Channel MOSFETs PDP3960 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3m 176A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 176A, RDS(ON) =3m @VGS = 10V performance, and withstand high energ... See More ⇒

Detailed specifications: PDN3909S, PDN3912S, PDN3914S, PDN3916S, PDN4911S, PDN6911S, PDP0959, PDP0980, RU7088R, PDQ3714, PDS3712, PDS3807, PDS3812, PDS3903, PDS4810, PDS4906, PDS4909

Keywords - PDP3960 MOSFET specs

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