PDQ3714 Datasheet and Replacement
Type Designator: PDQ3714
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT23-6
PDQ3714 substitution
PDQ3714 Datasheet (PDF)
pdq3714.pdf

30V N+P Dual Channel MOSFETs PDQ3714 General Description BVDSS RDSON ID These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS 30V 30m 4A technology. This advanced technology has been -30V 65m -3A especially tailored to minimize on-state resistance, provide superior switching performance, and withstand Features high energy pul
Datasheet: PDN3912S , PDN3914S , PDN3916S , PDN4911S , PDN6911S , PDP0959 , PDP0980 , PDP3960 , STP65NF06 , PDS3712 , PDS3807 , PDS3812 , PDS3903 , PDS4810 , PDS4906 , PDS4909 , PDS6903 .
History: MTB06N03E3 | MTB060N06I3 | WMB072N12LG2-S | SVSP20N60P7D2 | SRC60R145BS | WSP4953A | WMB240P10HG4
Keywords - PDQ3714 MOSFET datasheet
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History: MTB06N03E3 | MTB060N06I3 | WMB072N12LG2-S | SVSP20N60P7D2 | SRC60R145BS | WSP4953A | WMB240P10HG4



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