All MOSFET. PDQ3714 Datasheet

 

PDQ3714 Datasheet and Replacement


   Type Designator: PDQ3714
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.1 nC
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT23-6
 

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PDQ3714 Datasheet (PDF)

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PDQ3714

30V N+P Dual Channel MOSFETs PDQ3714 General Description BVDSS RDSON ID These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS 30V 30m 4A technology. This advanced technology has been -30V 65m -3A especially tailored to minimize on-state resistance, provide superior switching performance, and withstand Features high energy pul

Datasheet: PDN3912S , PDN3914S , PDN3916S , PDN4911S , PDN6911S , PDP0959 , PDP0980 , PDP3960 , 2N7002 , PDS3712 , PDS3807 , PDS3812 , PDS3903 , PDS4810 , PDS4906 , PDS4909 , PDS6903 .

History: 2SK1386 | NCE65T680I | APT50M50JLC | YJQ55P02A | PDP3960 | RJK0317DSP | MTP2N35

Keywords - PDQ3714 MOSFET datasheet

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