PDQ3714 PDF and Equivalents Search

 

PDQ3714 Specs and Replacement

Type Designator: PDQ3714

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23-6

PDQ3714 substitution

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PDQ3714 datasheet

 ..1. Size:736K  potens
 pdq3714.pdf pdf_icon

PDQ3714

30V N+P Dual Channel MOSFETs PDQ3714 General Description BVDSS RDSON ID These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS 30V 30m 4A technology. This advanced technology has been -30V 65m -3A especially tailored to minimize on-state resistance, provide superior switching performance, and withstand Features high energy pul... See More ⇒

Detailed specifications: PDN3912S, PDN3914S, PDN3916S, PDN4911S, PDN6911S, PDP0959, PDP0980, PDP3960, MMIS60R580P, PDS3712, PDS3807, PDS3812, PDS3903, PDS4810, PDS4906, PDS4909, PDS6903

Keywords - PDQ3714 MOSFET specs

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