All MOSFET. PDS3712 Datasheet

 

PDS3712 Datasheet and Replacement


   Type Designator: PDS3712
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
 

 PDS3712 substitution

   - MOSFET ⓘ Cross-Reference Search

 

PDS3712 Datasheet (PDF)

 ..1. Size:586K  potens
 pds3712.pdf pdf_icon

PDS3712

30V N+P Dual Channel MOSFETs PDS3712 General Description BVDSS RDSON ID These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS 30V 20m 8A technology. This advanced technology has been -30V 50m -5.5A especially tailored to minimize on-state resistance, provide superior switching performance, and withstand Features high energy

Datasheet: PDN3914S , PDN3916S , PDN4911S , PDN6911S , PDP0959 , PDP0980 , PDP3960 , PDQ3714 , HY1906P , PDS3807 , PDS3812 , PDS3903 , PDS4810 , PDS4906 , PDS4909 , PDS6903 , PDS6904 .

Keywords - PDS3712 MOSFET datasheet

 PDS3712 cross reference
 PDS3712 equivalent finder
 PDS3712 lookup
 PDS3712 substitution
 PDS3712 replacement

 

 
Back to Top

 


 
.