PDS3712 MOSFET. Datasheet pdf. Equivalent
Type Designator: PDS3712
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.1 nC
trⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
PDS3712 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDS3712 Datasheet (PDF)
..1. Size:586K potens
pds3712.pdf
pds3712.pdf
30V N+P Dual Channel MOSFETs PDS3712 General Description BVDSS RDSON ID These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS 30V 20m 8A technology. This advanced technology has been -30V 50m -5.5A especially tailored to minimize on-state resistance, provide superior switching performance, and withstand Features high energy
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
