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PDS3712 Specs and Replacement

Type Designator: PDS3712

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

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PDS3712 datasheet

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 pds3712.pdf pdf_icon

PDS3712

30V N+P Dual Channel MOSFETs PDS3712 General Description BVDSS RDSON ID These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS 30V 20m 8A technology. This advanced technology has been -30V 50m -5.5A especially tailored to minimize on-state resistance, provide superior switching performance, and withstand Features high energy... See More ⇒

Detailed specifications: PDN3914S, PDN3916S, PDN4911S, PDN6911S, PDP0959, PDP0980, PDP3960, PDQ3714, AOD4184A, PDS3807, PDS3812, PDS3903, PDS4810, PDS4906, PDS4909, PDS6903, PDS6904

Keywords - PDS3712 MOSFET specs

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