All MOSFET. PDS3812 Datasheet

 

PDS3812 Datasheet and Replacement


   Type Designator: PDS3812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
 

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PDS3812 Datasheet (PDF)

 ..1. Size:387K  potens
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PDS3812

30V Dual N-Channel MOSFETs PDS3812 General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 20m 7.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,7.5A, RDS(ON) =20m @VGS = 10V performance, and withstand hig

 9.1. Size:460K  potens
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PDS3812

30V P-Channel MOSFETs PDS3807 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 23m -7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-7A, RDS(ON) =23m@VGS = -10V performance, and withstand high ene

Datasheet: PDN4911S , PDN6911S , PDP0959 , PDP0980 , PDP3960 , PDQ3714 , PDS3712 , PDS3807 , IRFB7545 , PDS3903 , PDS4810 , PDS4906 , PDS4909 , PDS6903 , PDS6904 , PDS6910 , PMEB2516P .

History: MTP1N100 | WMB35P06TS | SRT10N230LD | 2SJ307 | IPA60R1K5CE | BUK472-100A | AOI442

Keywords - PDS3812 MOSFET datasheet

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