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PDS3812 Specs and Replacement

Type Designator: PDS3812

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

PDS3812 substitution

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PDS3812 datasheet

 ..1. Size:387K  potens
 pds3812.pdf pdf_icon

PDS3812

30V Dual N-Channel MOSFETs PDS3812 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 20m 7.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,7.5A, RDS(ON) =20m @VGS = 10V performance, and withstand hig... See More ⇒

 9.1. Size:460K  potens
 pds3807.pdf pdf_icon

PDS3812

30V P-Channel MOSFETs PDS3807 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 23m -7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-7A, RDS(ON) =23m @VGS = -10V performance, and withstand high ene... See More ⇒

Detailed specifications: PDN4911S, PDN6911S, PDP0959, PDP0980, PDP3960, PDQ3714, PDS3712, PDS3807, 60N06, PDS3903, PDS4810, PDS4906, PDS4909, PDS6903, PDS6904, PDS6910, PMEB2516P

Keywords - PDS3812 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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