PDS3812 MOSFET. Datasheet pdf. Equivalent
Type Designator: PDS3812
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.1 nC
trⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
PDS3812 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDS3812 Datasheet (PDF)
pds3812.pdf
30V Dual N-Channel MOSFETs PDS3812 General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 20m 7.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,7.5A, RDS(ON) =20m @VGS = 10V performance, and withstand hig
pds3807.pdf
30V P-Channel MOSFETs PDS3807 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 23m -7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-7A, RDS(ON) =23m@VGS = -10V performance, and withstand high ene
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
