All MOSFET. PDS3812 Datasheet

 

PDS3812 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PDS3812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.1 nC
   trⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8

 PDS3812 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDS3812 Datasheet (PDF)

 ..1. Size:387K  potens
 pds3812.pdf

PDS3812 PDS3812

30V Dual N-Channel MOSFETs PDS3812 General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 20m 7.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,7.5A, RDS(ON) =20m @VGS = 10V performance, and withstand hig

 9.1. Size:460K  potens
 pds3807.pdf

PDS3812 PDS3812

30V P-Channel MOSFETs PDS3807 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 23m -7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-7A, RDS(ON) =23m@VGS = -10V performance, and withstand high ene

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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