PDS3903 Specs and Replacement
Type Designator: PDS3903
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.5 nS
Cossⓘ - Output Capacitance: 410 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: SOP8
PDS3903 substitution
- MOSFET ⓘ Cross-Reference Search
PDS3903 datasheet
pds3903.pdf
30V P-Channel MOSFETs PDS3903 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 9.5m -13A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-13A, RDS(ON) =9.5m @VGS = -10V performance, and withstand high... See More ⇒
Detailed specifications: PDN6911S, PDP0959, PDP0980, PDP3960, PDQ3714, PDS3712, PDS3807, PDS3812, IRFP064N, PDS4810, PDS4906, PDS4909, PDS6903, PDS6904, PDS6910, PMEB2516P, PMEN2423S
Keywords - PDS3903 MOSFET specs
PDS3903 cross reference
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PDS3903 substitution
PDS3903 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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