All MOSFET. PDS3903 Datasheet

 

PDS3903 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PDS3903
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SOP8

 PDS3903 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDS3903 Datasheet (PDF)

 ..1. Size:460K  potens
 pds3903.pdf

PDS3903 PDS3903

30V P-Channel MOSFETs PDS3903 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 9.5m -13A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-13A, RDS(ON) =9.5m@VGS = -10V performance, and withstand high

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: RU6881R | RU8205C6 | IXFR10N100Q

 

 
Back to Top