All MOSFET. PDS3903 Datasheet

 

PDS3903 Datasheet and Replacement


   Type Designator: PDS3903
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SOP8
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PDS3903 Datasheet (PDF)

 ..1. Size:460K  potens
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PDS3903

30V P-Channel MOSFETs PDS3903 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 9.5m -13A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-13A, RDS(ON) =9.5m@VGS = -10V performance, and withstand high

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK1496-Z | IRF630P | AP3P7R0EMT | SJMN600R70MD | KF4N60D | PDC2603Z | IRF541FI

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