PDS3903 MOSFET. Datasheet pdf. Equivalent
Type Designator: PDS3903
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 35 nC
Rise Time (tr): 10.5 nS
Drain-Source Capacitance (Cd): 410 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0095 Ohm
Package: SOP8
PDS3903 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDS3903 Datasheet (PDF)
..1. Size:460K potens
pds3903.pdf
pds3903.pdf
30V P-Channel MOSFETs PDS3903 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 9.5m -13A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-13A, RDS(ON) =9.5m@VGS = -10V performance, and withstand high
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