All MOSFET. PDS3903 Datasheet

 

PDS3903 Datasheet and Replacement


   Type Designator: PDS3903
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SOP8
 

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PDS3903 Datasheet (PDF)

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PDS3903

30V P-Channel MOSFETs PDS3903 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 9.5m -13A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-13A, RDS(ON) =9.5m@VGS = -10V performance, and withstand high

Datasheet: PDN6911S , PDP0959 , PDP0980 , PDP3960 , PDQ3714 , PDS3712 , PDS3807 , PDS3812 , 5N50 , PDS4810 , PDS4906 , PDS4909 , PDS6903 , PDS6904 , PDS6910 , PMEB2516P , PMEN2423S .

History: 2N7262 | DMN2005K | NVTFS6H854N | NTD4805NT4G | 2N7261 | JCS10N60FC | NCE0157D

Keywords - PDS3903 MOSFET datasheet

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