PDS4810 MOSFET. Datasheet pdf. Equivalent
Type Designator: PDS4810
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.8 nC
trⓘ - Rise Time: 10.5 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
PDS4810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDS4810 Datasheet (PDF)
pds4810.pdf
40V Dual N-Channel MOSFETs PDS4810 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 40V 18m 8A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 40V,8A,RDS(ON) =18m@VGS = 10V performance, and withstand high ener
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