PDS4810 Specs and Replacement
Type Designator: PDS4810
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.5 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
PDS4810 substitution
- MOSFET ⓘ Cross-Reference Search
PDS4810 datasheet
pds4810.pdf
40V Dual N-Channel MOSFETs PDS4810 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 40V 18m 8A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 40V,8A,RDS(ON) =18m @VGS = 10V performance, and withstand high ener... See More ⇒
Detailed specifications: PDP0959, PDP0980, PDP3960, PDQ3714, PDS3712, PDS3807, PDS3812, PDS3903, AO4468, PDS4906, PDS4909, PDS6903, PDS6904, PDS6910, PMEB2516P, PMEN2423S, PTP4N65
Keywords - PDS4810 MOSFET specs
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