All MOSFET. PDS4810 Datasheet

 

PDS4810 Datasheet and Replacement


   Type Designator: PDS4810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.8 nC
   tr ⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8
 

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PDS4810 Datasheet (PDF)

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PDS4810

40V Dual N-Channel MOSFETs PDS4810 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 40V 18m 8A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 40V,8A,RDS(ON) =18m@VGS = 10V performance, and withstand high ener

Datasheet: PDP0959 , PDP0980 , PDP3960 , PDQ3714 , PDS3712 , PDS3807 , PDS3812 , PDS3903 , IRFP064N , PDS4906 , PDS4909 , PDS6903 , PDS6904 , PDS6910 , PMEB2516P , PMEN2423S , PTP4N65 .

History: RU2H30R

Keywords - PDS4810 MOSFET datasheet

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