All MOSFET. PDS4906 Datasheet

 

PDS4906 Datasheet and Replacement


   Type Designator: PDS4906
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8
 

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PDS4906 Datasheet (PDF)

 ..1. Size:339K  potens
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PDS4906

40V N-Channel MOSFETs PDS4906 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 40V 9m 9A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 40V, 9A, RDS(ON)=9m@VGS = 10V performance, and withstand high energy pul

 8.1. Size:756K  potens
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PDS4906

40V P-Channel MOSFETs PDS4909 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -40V 45m -6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -40V,-6.5A, RDS(ON) =45m@VGS = -10V performance, and withstand h

Datasheet: PDP0980 , PDP3960 , PDQ3714 , PDS3712 , PDS3807 , PDS3812 , PDS3903 , PDS4810 , BS170 , PDS4909 , PDS6903 , PDS6904 , PDS6910 , PMEB2516P , PMEN2423S , PTP4N65 , PTF4N65 .

History: CS11N65F | LNG05R100 | NCE65T900K | NCEP30T19G | SW4N70B

Keywords - PDS4906 MOSFET datasheet

 PDS4906 cross reference
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