All MOSFET. PDS4906 Datasheet

 

PDS4906 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PDS4906
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.2 nC
   trⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8

 PDS4906 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDS4906 Datasheet (PDF)

 ..1. Size:339K  potens
 pds4906.pdf

PDS4906 PDS4906

40V N-Channel MOSFETs PDS4906 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 40V 9m 9A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 40V, 9A, RDS(ON)=9m@VGS = 10V performance, and withstand high energy pul

 8.1. Size:756K  potens
 pds4909.pdf

PDS4906 PDS4906

40V P-Channel MOSFETs PDS4909 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -40V 45m -6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -40V,-6.5A, RDS(ON) =45m@VGS = -10V performance, and withstand h

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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