PDS4909 PDF and Equivalents Search

 

PDS4909 Specs and Replacement

Type Designator: PDS4909

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOP8

PDS4909 substitution

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PDS4909 datasheet

 ..1. Size:756K  potens
 pds4909.pdf pdf_icon

PDS4909

40V P-Channel MOSFETs PDS4909 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -40V 45m -6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -40V,-6.5A, RDS(ON) =45m @VGS = -10V performance, and withstand h... See More ⇒

 8.1. Size:339K  potens
 pds4906.pdf pdf_icon

PDS4909

40V N-Channel MOSFETs PDS4906 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 40V 9m 9A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 40V, 9A, RDS(ON)=9m @VGS = 10V performance, and withstand high energy pul... See More ⇒

Detailed specifications: PDP3960, PDQ3714, PDS3712, PDS3807, PDS3812, PDS3903, PDS4810, PDS4906, IRFZ44N, PDS6903, PDS6904, PDS6910, PMEB2516P, PMEN2423S, PTP4N65, PTF4N65, PTP80N06

Keywords - PDS4909 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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