All MOSFET. PDS4909 Datasheet

 

PDS4909 Datasheet and Replacement


   Type Designator: PDS4909
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP8
 

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PDS4909 Datasheet (PDF)

 ..1. Size:756K  potens
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PDS4909

40V P-Channel MOSFETs PDS4909 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -40V 45m -6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -40V,-6.5A, RDS(ON) =45m@VGS = -10V performance, and withstand h

 8.1. Size:339K  potens
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PDS4909

40V N-Channel MOSFETs PDS4906 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 40V 9m 9A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 40V, 9A, RDS(ON)=9m@VGS = 10V performance, and withstand high energy pul

Datasheet: PDP3960 , PDQ3714 , PDS3712 , PDS3807 , PDS3812 , PDS3903 , PDS4810 , PDS4906 , IRFZ44N , PDS6903 , PDS6904 , PDS6910 , PMEB2516P , PMEN2423S , PTP4N65 , PTF4N65 , PTP80N06 .

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