All MOSFET. PMEB2516P Datasheet

 

PMEB2516P Datasheet and Replacement


   Type Designator: PMEB2516P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN3X3
 

 PMEB2516P substitution

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PMEB2516P Datasheet (PDF)

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PMEB2516P

20V Dual N-Channel MOSFETs PMEB2516P General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 6m 40A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,40A, RDS(ON) =6m @VGS = 4.5V performance, and withstand high

Datasheet: PDS3812 , PDS3903 , PDS4810 , PDS4906 , PDS4909 , PDS6903 , PDS6904 , PDS6910 , IRF840 , PMEN2423S , PTP4N65 , PTF4N65 , PTP80N06 , PTY80N06 , PTP80N60 , PTY80N60 , PTP88N07 .

History: MTB02N03H8 | RDX080N50FU6 | SPP80N06S2L-09 | AP2N1K2EN1 | 2SK3058-ZJ | SSW65R090S2

Keywords - PMEB2516P MOSFET datasheet

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