All MOSFET. PMEB2516P Datasheet

 

PMEB2516P Datasheet and Replacement


   Type Designator: PMEB2516P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.9 nC
   trⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN3X3
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PMEB2516P Datasheet (PDF)

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PMEB2516P

20V Dual N-Channel MOSFETs PMEB2516P General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 6m 40A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,40A, RDS(ON) =6m @VGS = 4.5V performance, and withstand high

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History: BL7N70-U

Keywords - PMEB2516P MOSFET datasheet

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