PMEB2516P MOSFET. Datasheet pdf. Equivalent
Type Designator: PMEB2516P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19.9 nC
trⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 237 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DFN3X3
PMEB2516P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMEB2516P Datasheet (PDF)
..1. Size:597K potens
pmeb2516p.pdf
pmeb2516p.pdf
20V Dual N-Channel MOSFETs PMEB2516P General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 6m 40A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,40A, RDS(ON) =6m @VGS = 4.5V performance, and withstand high
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