PMEB2516P PDF and Equivalents Search

 

PMEB2516P Specs and Replacement

Type Designator: PMEB2516P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 237 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: DFN3X3

PMEB2516P substitution

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PMEB2516P datasheet

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 pmeb2516p.pdf pdf_icon

PMEB2516P

20V Dual N-Channel MOSFETs PMEB2516P General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 6m 40A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,40A, RDS(ON) =6m @VGS = 4.5V performance, and withstand high... See More ⇒

Detailed specifications: PDS3812, PDS3903, PDS4810, PDS4906, PDS4909, PDS6903, PDS6904, PDS6910, 20N60, PMEN2423S, PTP4N65, PTF4N65, PTP80N06, PTY80N06, PTP80N60, PTY80N60, PTP88N07

Keywords - PMEB2516P MOSFET specs

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