All MOSFET. PMEB2516P Datasheet

 

PMEB2516P MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMEB2516P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.9 nC
   trⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN3X3

 PMEB2516P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMEB2516P Datasheet (PDF)

 ..1. Size:597K  potens
 pmeb2516p.pdf

PMEB2516P PMEB2516P

20V Dual N-Channel MOSFETs PMEB2516P General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 6m 40A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,40A, RDS(ON) =6m @VGS = 4.5V performance, and withstand high

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MMDF1N05E

 

 
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