All MOSFET. PMEN2423S Datasheet

 

PMEN2423S Datasheet and Replacement


   Type Designator: PMEN2423S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SOT23-3S
 

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PMEN2423S Datasheet (PDF)

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PMEN2423S

20V P-Channel MOSFETs PMEN2423S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 43m -4A advanced technology has been especially tailored to -20V,-4A, RDS(ON) =43m@VGS = -4.5V minimize on-state resistance, provide superior switching Low gate charge (typicalQ gd 4.5nC) p

Datasheet: PDS3903 , PDS4810 , PDS4906 , PDS4909 , PDS6903 , PDS6904 , PDS6910 , PMEB2516P , IRF540 , PTP4N65 , PTF4N65 , PTP80N06 , PTY80N06 , PTP80N60 , PTY80N60 , PTP88N07 , PTY88N07 .

History: SSB65R360S2 | SSB80R380S

Keywords - PMEN2423S MOSFET datasheet

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