PMEN2423S Specs and Replacement
Type Designator: PMEN2423S
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: SOT23-3S
PMEN2423S substitution
- MOSFET ⓘ Cross-Reference Search
PMEN2423S datasheet
pmen2423s.pdf
20V P-Channel MOSFETs PMEN2423S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 43m -4A advanced technology has been especially tailored to -20V,-4A, RDS(ON) =43m @VGS = -4.5V minimize on-state resistance, provide superior switching Low gate charge (typicalQ gd 4.5nC) p... See More ⇒
Detailed specifications: PDS3903, PDS4810, PDS4906, PDS4909, PDS6903, PDS6904, PDS6910, PMEB2516P, IRF540N, PTP4N65, PTF4N65, PTP80N06, PTY80N06, PTP80N60, PTY80N60, PTP88N07, PTY88N07
Keywords - PMEN2423S MOSFET specs
PMEN2423S cross reference
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PMEN2423S replacement
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