All MOSFET. PMEN2423S Datasheet

 

PMEN2423S Datasheet and Replacement


   Type Designator: PMEN2423S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SOT23-3S
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PMEN2423S Datasheet (PDF)

 ..1. Size:415K  potens
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PMEN2423S

20V P-Channel MOSFETs PMEN2423S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 43m -4A advanced technology has been especially tailored to -20V,-4A, RDS(ON) =43m@VGS = -4.5V minimize on-state resistance, provide superior switching Low gate charge (typicalQ gd 4.5nC) p

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

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