PTP4N65 MOSFET Datasheet: N-Ch, 650V, 4A. Full specification with pinout and replacement list

PTP4N65 Specs and Replacement

Type Designator: PTP4N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 109 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220

PTP4N65 substitution

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PTP4N65 datasheet

..1. Size:3237K cn puolop
ptp4n65 ptf4n65.pdf pdf_icon

PTP4 N65 /PTF4 N65 65 0V/4 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S G D S TO-220 TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Funct... See More ⇒

8.1. Size:1946K cn puolop
ptp4n60 ptf4n60.pdf pdf_icon

PTP4 N60/PTF4 N60 600V/4 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S G D S TO-220 TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functio... See More ⇒

Detailed specifications: PDS4810, PDS4906, PDS4909, PDS6903, PDS6904, PDS6910, PMEB2516P, PMEN2423S, IRF540, PTF4N65, PTP80N06, PTY80N06, PTP80N60, PTY80N60, PTP88N07, PTY88N07, PTP90N08