PTP80N60 Datasheet and Replacement
Type Designator: PTP80N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 365 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
PTP80N60 substitution
PTP80N60 Datasheet (PDF)
ptp80n60 pty80n60.pdf

PTP80N60/PTY80N6060V/80A N-Chnnel MOSFETFeaturesD 60V/80ARDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current % 100 Avalanche TestedDApplicationG S Power SupplyTO-220 TO-263 DC-DC Converters UPS Battery Manageme ent System Absolute Maxim
ptp80n06 pty80n06.pdf

PTP80N06/PTY80N0660V/80A N-Chnnel MOSFETFeaturesD 60V/80ARDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current % 100 Avalanche TestedDApplicationG S Power SupplyTO-220 TO-263 DC-DC Converters UPS Battery Manageme ent System Absolute Maxim
Datasheet: PDS6904 , PDS6910 , PMEB2516P , PMEN2423S , PTP4N65 , PTF4N65 , PTP80N06 , PTY80N06 , IRFZ44 , PTY80N60 , PTP88N07 , PTY88N07 , PTP90N08 , PTY90N08 , PTQ45P02 , PTS2017 , PTS4614 .
Keywords - PTP80N60 MOSFET datasheet
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History: SIF5N40D | MS10N80



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