PTY88N07 Specs and Replacement
Type Designator: PTY88N07
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 174 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO263
PTY88N07 substitution
- MOSFET ⓘ Cross-Reference Search
PTY88N07 datasheet
ptp88n07 pty88n07.pdf
PTP88N07/PTY88N07 65V/88A N-Chnnel MOSFET Features D 65V/88A RDS(ON)=7.0m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D % 100 Avalanche Tested Application G S Power Supply TO-220 TO-263 DC-DC Converters UPS Battery Manageme ent System Absolute Maxim... See More ⇒
Detailed specifications: PMEN2423S, PTP4N65, PTF4N65, PTP80N06, PTY80N06, PTP80N60, PTY80N60, PTP88N07, IRFB4110, PTP90N08, PTY90N08, PTQ45P02, PTS2017, PTS4614, PTS4803, PTS4842, PTS4936
Keywords - PTY88N07 MOSFET specs
PTY88N07 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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