PTS2017 Specs and Replacement
Type Designator: PTS2017
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOP8
PTS2017 substitution
- MOSFET ⓘ Cross-Reference Search
PTS2017 datasheet
pts2017.pdf
PTS2017 20V/17A N-Channel Advanced Power MOSFET Features Very Low RDS(on) @ 3.3V Logic. BVDSS 20 V 3.3V Logic Level Control ID 17 A SOP8 Package RDSON@VGS=4.5V 5.5 m Pb-Free, RoHS Compliant RDSON@VGS=3.3V 6.5 m Applications Low Side Load Switch Battery Switch Optimized for Power Management Applications for Portable Products, such as... See More ⇒
Detailed specifications: PTY80N06, PTP80N60, PTY80N60, PTP88N07, PTY88N07, PTP90N08, PTY90N08, PTQ45P02, IRFB4227, PTS4614, PTS4803, PTS4842, PTS4936, A03415, APM2301AAC, APM2324A, SDW3045
Keywords - PTS2017 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: BRCS50N06DP
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