All MOSFET. PTS2017 Datasheet

 

PTS2017 Datasheet and Replacement


   Type Designator: PTS2017
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOP8
 

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PTS2017 Datasheet (PDF)

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PTS2017

PTS2017 20V/17A N-Channel Advanced Power MOSFET Features Very Low RDS(on) @ 3.3V Logic. BVDSS 20 V 3.3V Logic Level Control ID 17 A SOP8 Package RDSON@VGS=4.5V 5.5 m Pb-Free, RoHS Compliant RDSON@VGS=3.3V 6.5 m Applications Low Side Load Switch Battery Switch Optimized for Power Management Applications for Portable Products, such as

Datasheet: PTY80N06 , PTP80N60 , PTY80N60 , PTP88N07 , PTY88N07 , PTP90N08 , PTY90N08 , PTQ45P02 , AON6414A , PTS4614 , PTS4803 , PTS4842 , PTS4936 , A03415 , APM2301AAC , APM2324A , SDW3045 .

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