PTS2017 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTS2017
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOP8
PTS2017 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTS2017 Datasheet (PDF)
..1. Size:715K cn puolop
pts2017.pdf
pts2017.pdf
PTS2017 20V/17A N-Channel Advanced Power MOSFET Features Very Low RDS(on) @ 3.3V Logic. BVDSS 20 V 3.3V Logic Level Control ID 17 A SOP8 Package RDSON@VGS=4.5V 5.5 m Pb-Free, RoHS Compliant RDSON@VGS=3.3V 6.5 m Applications Low Side Load Switch Battery Switch Optimized for Power Management Applications for Portable Products, such as
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
