All MOSFET. PTS4842 Datasheet

 

PTS4842 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PTS4842
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOP8

 PTS4842 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTS4842 Datasheet (PDF)

 ..1. Size:546K  cn puolop
pts4842.pdf

PTS4842 PTS4842

PTS484230V/7.7A Dual N-Channel Advanced Power MOSFETPin Description Features BVDSS30V, RDS(ON)=21m(Typ)@VGS=10V Low On-Resistance Fast Switching Lead-Free,Hg-Free, Green Product PTS4PTS4PTS4842 designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features

 9.1. Size:600K  cn puolop
pts4803.pdf

PTS4842 PTS4842

PTS4803 -30V/-5.8A Dual P-Channel Advanced Power MOSFET Features Key Items PMOS Unit Low RDS(on) @VGS=-5V BVDSS -30 V 5V Logic Level Control ID -5.8 A Dual P-Channel SOP8 Package RDSON1@Vgs=-4.5V 50 m Pb-Free, RoHS Compliant RDSON2@vgs=-2.5V 70 m Applications The PTS4803 uses advanced trench technology to provide excellent RDS(ON) with low gate c

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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