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SDW3045 Specs and Replacement

Type Designator: SDW3045

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.8 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: DFN2X2

SDW3045 substitution

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SDW3045 datasheet

 ..1. Size:920K  cn shikues
 sdw3045.pdf pdf_icon

SDW3045

SDW3045 These N-Channel enhancement mode power field effect BVDSS RDSON ID transistors are using trench DMOS technology. This 30V 40m 4.5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are DFN2X2 Dual 2EP Pin Configu... See More ⇒

Detailed specifications: PTS2017, PTS4614, PTS4803, PTS4842, PTS4936, A03415, APM2301AAC, APM2324A, 7N65, SK04N65B, SK07N65B, SK07N65B-TF, SK2300A, SK2301A, SK2301AA, SK2302A, SK2302AA

Keywords - SDW3045 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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