All MOSFET. SDW3045 Datasheet

 

SDW3045 Datasheet and Replacement


   Type Designator: SDW3045
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.8 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: DFN2X2
 

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SDW3045 Datasheet (PDF)

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SDW3045

SDW3045These N-Channel enhancement mode power field effect BVDSS RDSON ID transistors are using trench DMOS technology. This 30V 40m 4.5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are DFN2X2 Dual 2EP Pin Configu

Datasheet: PTS2017 , PTS4614 , PTS4803 , PTS4842 , PTS4936 , A03415 , APM2301AAC , APM2324A , STP75NF75 , SK04N65B , SK07N65B , SK07N65B-TF , SK2300A , SK2301A , SK2301AA , SK2302A , SK2302AA .

History: IPI60R299CP | SSI4N90A | SWK15P03 | SML30B48 | STB10LN80K5 | IRHQ7110 | IRF823FI

Keywords - SDW3045 MOSFET datasheet

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