SK04N65B Specs and Replacement
Type Designator: SK04N65B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
SK04N65B substitution
- MOSFET ⓘ Cross-Reference Search
SK04N65B datasheet
sk04n65b.pdf
SK04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 2.3 4.0A RDS(ON),typ.=2.3 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power Ordering Information Part Number Package TO-251 SK04N65B TO-252 Absolute Maximum Ratings T =25 unless otherwise... See More ⇒
Detailed specifications: PTS4614, PTS4803, PTS4842, PTS4936, A03415, APM2301AAC, APM2324A, SDW3045, IRFP250N, SK07N65B, SK07N65B-TF, SK2300A, SK2301A, SK2301AA, SK2302A, SK2302AA, SK2302AAT
Keywords - SK04N65B MOSFET specs
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History: RW1A025AP | BSZ300N15NS5 | ASDM30N65E | FDB0170N607L | BSZ099N06LS5 | AOB4S60 | AP30T10GS
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