SK2306 MOSFET Datasheet: N-Ch, 30V, 3.6A. Full specification with pinout and replacement list

SK2306 Specs and Replacement

Type Designator: SK2306

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SOT23

SK2306 substitution

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SK2306 datasheet

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sk2306.pdf pdf_icon

SK2306 N-Channel Enhancement Mode Power MOSFET Description The 2306 uses advanced trench technology to provide SK excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. D General Features VDS = 30V,ID = 3.6A G RDS(ON) ... See More ⇒

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sk2302aa.pdf pdf_icon

SK2302AA SOT-23 Plastic-Encapsulate Transistors FEATURES Trench FET Power MOSFET MARKING A2SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 V ID Drain current 2.9 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTER... See More ⇒

9.3. Size:719K cn shikues
sk2302aat.pdf pdf_icon

SK2302AAT SOT-523 Plastic-Encapsulate MOSFETS FEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices DC/DC Converter SOT 523 MARKING 2302 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (T a =25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Continuous Drain Current ID 2.1 ... See More ⇒