SK2306N-Channel Enhancement Mode Power MOSFET Description The 2306 uses advanced trench technology to provide SKexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. DGeneral Features VDS = 30V,ID = 3.6A GRDS(ON)

SK2302AASOT-23 Plastic-Encapsulate Transistors FEATURES Trench FET Power MOSFET MARKING: A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.9 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTER

SK2302AATSOT-523 Plastic-Encapsulate MOSFETSFEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices DC/DC Converter SOT523 MARKING: 2302 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (T a =25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Continuous Drain Current ID 2.1