SKQ50N03BD Specs and Replacement
Type Designator: SKQ50N03BD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.5 nS
Cossⓘ - Output Capacitance: 435 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DFN3.3X3.3
SKQ50N03BD substitution
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SKQ50N03BD datasheet
skq50n03bd.pdf
SKQ50N03BD N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V =10V) 6.0 mohm DS(ON) GS R ( at V =4.5V) 8.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell design for low R... See More ⇒
Detailed specifications: SK2302A, SK2302AA, SK2302AAT, SK2304AA, SK2306, SK2307A, SK2310AA, SK50N06A, SPP20N60C3, SKQ55P02AD, SGO100N08L, SGO4606T, SGT100N45T, SGP100N45T, SSB65R360S2, SSI65R360S2, SSB80R380S
Keywords - SKQ50N03BD MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: JMSH0606PG | SEFM250 | 2SK2615 | MDT4N65 | AP3P050H | STK830F | BRD65R650C
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