All MOSFET. SKQ50N03BD Datasheet

 

SKQ50N03BD MOSFET. Datasheet pdf. Equivalent


   Type Designator: SKQ50N03BD
   Marking Code: Q50N03B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 52.8 nC
   trⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 435 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN3.3X3.3

 SKQ50N03BD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SKQ50N03BD Datasheet (PDF)

 ..1. Size:770K  cn shikues
 skq50n03bd.pdf

SKQ50N03BD SKQ50N03BD

SKQ50N03BD N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V =10V) 6.0 mohm DS(ON) GS R ( at V =4.5V) 8.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell design for low R

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