SKQ50N03BD PDF and Equivalents Search

 

SKQ50N03BD Specs and Replacement

Type Designator: SKQ50N03BD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.5 nS

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: DFN3.3X3.3

SKQ50N03BD substitution

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SKQ50N03BD datasheet

 ..1. Size:770K  cn shikues
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SKQ50N03BD

SKQ50N03BD N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V =10V) 6.0 mohm DS(ON) GS R ( at V =4.5V) 8.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell design for low R... See More ⇒

Detailed specifications: SK2302A, SK2302AA, SK2302AAT, SK2304AA, SK2306, SK2307A, SK2310AA, SK50N06A, SPP20N60C3, SKQ55P02AD, SGO100N08L, SGO4606T, SGT100N45T, SGP100N45T, SSB65R360S2, SSI65R360S2, SSB80R380S

Keywords - SKQ50N03BD MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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