All MOSFET. SKQ50N03BD Datasheet

 

SKQ50N03BD Datasheet and Replacement


   Type Designator: SKQ50N03BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 435 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN3.3X3.3
 

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SKQ50N03BD Datasheet (PDF)

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SKQ50N03BD

SKQ50N03BD N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V =10V) 6.0 mohm DS(ON) GS R ( at V =4.5V) 8.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell design for low R

Datasheet: SK2302A , SK2302AA , SK2302AAT , SK2304AA , SK2306 , SK2307A , SK2310AA , SK50N06A , IRF9540N , SKQ55P02AD , SGO100N08L , SGO4606T , SGT100N45T , SGP100N45T , SSB65R360S2 , SSI65R360S2 , SSB80R380S .

History: 2SK2606 | UTT30P06G-TN3-R | IXFA12N50P | UTT4850L-S08-R | FDMS3600AS | MTM45N05E

Keywords - SKQ50N03BD MOSFET datasheet

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