All MOSFET. SKQ55P02AD Datasheet

 

SKQ55P02AD Datasheet and Replacement


   Type Designator: SKQ55P02AD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: DFN3.3X3.3
 

 SKQ55P02AD substitution

   - MOSFET ⓘ Cross-Reference Search

 

SKQ55P02AD Datasheet (PDF)

 ..1. Size:688K  cn shikues
 skq55p02ad.pdf pdf_icon

SKQ55P02AD

SKQ55P02ADP-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -55A D R ( at V =-4.5V) 8.3mohm DS(ON) GS R ( at V =-2.5V) 10 mohm DS(ON) GS R ( at V =-1.8V) 15 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissip

Datasheet: SK2302AA , SK2302AAT , SK2304AA , SK2306 , SK2307A , SK2310AA , SK50N06A , SKQ50N03BD , IRF9540N , SGO100N08L , SGO4606T , SGT100N45T , SGP100N45T , SSB65R360S2 , SSI65R360S2 , SSB80R380S , SSF50R140S .

History: FDB12N50U

Keywords - SKQ55P02AD MOSFET datasheet

 SKQ55P02AD cross reference
 SKQ55P02AD equivalent finder
 SKQ55P02AD lookup
 SKQ55P02AD substitution
 SKQ55P02AD replacement

 

 
Back to Top

 


 
.