SKQ55P02AD PDF and Equivalents Search

 

SKQ55P02AD Specs and Replacement

Type Designator: SKQ55P02AD

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 625 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm

Package: DFN3.3X3.3

SKQ55P02AD substitution

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SKQ55P02AD datasheet

 ..1. Size:688K  cn shikues
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SKQ55P02AD

SKQ55P02AD P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -55A D R ( at V =-4.5V) 8.3mohm DS(ON) GS R ( at V =-2.5V) 10 mohm DS(ON) GS R ( at V =-1.8V) 15 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissip... See More ⇒

Detailed specifications: SK2302AA, SK2302AAT, SK2304AA, SK2306, SK2307A, SK2310AA, SK50N06A, SKQ50N03BD, SKD502T, SGO100N08L, SGO4606T, SGT100N45T, SGP100N45T, SSB65R360S2, SSI65R360S2, SSB80R380S, SSF50R140S

Keywords - SKQ55P02AD MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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