All MOSFET. SKQ55P02AD Datasheet

 

SKQ55P02AD MOSFET. Datasheet pdf. Equivalent


   Type Designator: SKQ55P02AD
   Marking Code: Q55P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: DFN3.3X3.3

 SKQ55P02AD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SKQ55P02AD Datasheet (PDF)

 ..1. Size:688K  cn shikues
 skq55p02ad.pdf

SKQ55P02AD SKQ55P02AD

SKQ55P02ADP-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -55A D R ( at V =-4.5V) 8.3mohm DS(ON) GS R ( at V =-2.5V) 10 mohm DS(ON) GS R ( at V =-1.8V) 15 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissip

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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