All MOSFET. SKQ55P02AD Datasheet

 

SKQ55P02AD Datasheet and Replacement


   Type Designator: SKQ55P02AD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: DFN3.3X3.3
 

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SKQ55P02AD Datasheet (PDF)

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SKQ55P02AD

SKQ55P02ADP-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -55A D R ( at V =-4.5V) 8.3mohm DS(ON) GS R ( at V =-2.5V) 10 mohm DS(ON) GS R ( at V =-1.8V) 15 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissip

Datasheet: SK2302AA , SK2302AAT , SK2304AA , SK2306 , SK2307A , SK2310AA , SK50N06A , SKQ50N03BD , SPP20N60C3 , SGO100N08L , SGO4606T , SGT100N45T , SGP100N45T , SSB65R360S2 , SSI65R360S2 , SSB80R380S , SSF50R140S .

History: MTM45N05E | FDMS3600AS | IXFA12N50P | UTT4850L-S08-R | UTT30P06G-TN3-R | 2SK2606

Keywords - SKQ55P02AD MOSFET datasheet

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