All MOSFET. SGO100N08L Datasheet

 

SGO100N08L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SGO100N08L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: SOIC8

 SGO100N08L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SGO100N08L Datasheet (PDF)

 ..1. Size:711K  cn super semi
 sgo100n08l.pdf

SGO100N08L SGO100N08L

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N08L Rev. 1.0 Jul. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGO100N08L 100V N-Channel MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is VDS 100V ID (at Vgs=10V) 14A uniquely optimized to provide the

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