SGO100N08L PDF and Equivalents Search

 

SGO100N08L Specs and Replacement

Type Designator: SGO100N08L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: SOIC8

SGO100N08L substitution

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SGO100N08L datasheet

 ..1. Size:711K  cn super semi
 sgo100n08l.pdf pdf_icon

SGO100N08L

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N08L Rev. 1.0 Jul. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGO100N08L 100V N-Channel MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is VDS 100V ID (at Vgs=10V) 14A uniquely optimized to provide the... See More ⇒

Detailed specifications: SK2302AAT, SK2304AA, SK2306, SK2307A, SK2310AA, SK50N06A, SKQ50N03BD, SKQ55P02AD, K4145, SGO4606T, SGT100N45T, SGP100N45T, SSB65R360S2, SSI65R360S2, SSB80R380S, SSF50R140S, SSP50R140S

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