All MOSFET. SGO100N08L Datasheet

 

SGO100N08L Datasheet and Replacement


   Type Designator: SGO100N08L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: SOIC8
 

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SGO100N08L Datasheet (PDF)

 ..1. Size:711K  cn super semi
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SGO100N08L

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N08L Rev. 1.0 Jul. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGO100N08L 100V N-Channel MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is VDS 100V ID (at Vgs=10V) 14A uniquely optimized to provide the

Datasheet: SK2302AAT , SK2304AA , SK2306 , SK2307A , SK2310AA , SK50N06A , SKQ50N03BD , SKQ55P02AD , IRFB3607 , SGO4606T , SGT100N45T , SGP100N45T , SSB65R360S2 , SSI65R360S2 , SSB80R380S , SSF50R140S , SSP50R140S .

History: IRF7751G | IRFU3710ZPBF | JFFC7N65E | IRFH8303PBF

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