SGO4606T PDF and Equivalents Search

 

SGO4606T Specs and Replacement

Type Designator: SGO4606T

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: SOIC8

SGO4606T substitution

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SGO4606T datasheet

 ..1. Size:948K  cn super semi
 sgo4606t.pdf pdf_icon

SGO4606T

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 30V Complementary Power Transistor SGO4606T Rev. 1.0 Aug. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGO4606T 30V Complementary MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is N-Channel P-Channel uniquely optimized to provide the most efficient h... See More ⇒

Detailed specifications: SK2304AA, SK2306, SK2307A, SK2310AA, SK50N06A, SKQ50N03BD, SKQ55P02AD, SGO100N08L, 13N50, SGT100N45T, SGP100N45T, SSB65R360S2, SSI65R360S2, SSB80R380S, SSF50R140S, SSP50R140S, SSW50R140S

Keywords - SGO4606T MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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