All MOSFET. SGO4606T Datasheet

 

SGO4606T Datasheet and Replacement


   Type Designator: SGO4606T
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOIC8
 

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SGO4606T Datasheet (PDF)

 ..1. Size:948K  cn super semi
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SGO4606T

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 30V Complementary Power Transistor SGO4606T Rev. 1.0 Aug. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGO4606T 30V Complementary MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is N-Channel P-Channel uniquely optimized to provide the most efficient h

Datasheet: SK2304AA , SK2306 , SK2307A , SK2310AA , SK50N06A , SKQ50N03BD , SKQ55P02AD , SGO100N08L , TK10A60D , SGT100N45T , SGP100N45T , SSB65R360S2 , SSI65R360S2 , SSB80R380S , SSF50R140S , SSP50R140S , SSW50R140S .

History: WMN28N60C4 | IRFH5302TRPBF | WML05N100C2 | HY1707PS | SIF12N65C | LSK3541FS8 | IRFR110

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