SGT100N45T Specs and Replacement
Type Designator: SGT100N45T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO252
SGT100N45T substitution
- MOSFET ⓘ Cross-Reference Search
SGT100N45T datasheet
sgt100n45t sgp100n45t.pdf
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N45T Rev. 1.0 Dec. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGT100N45T/SGP100N45T 100V N-Channel MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is VDS 100V ID (at Vgs=10V) 25A uniquely optimized to ... See More ⇒
sgt10t60sdm1p7.pdf
SGT10T60SDM1P7 10A 600V C 2 SGT10T60SDM1P7 1 Field StopIII G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@I... See More ⇒
sgt10u60sdm2d.pdf
SGT10U60SDM2D 10A 600V C 2 SGT10U60SDM2D 4 Plus Field Stop IV+ 1 G UPS,SMPS PFC 3 E 10A 600V VCE(sat)( )=1.65V@ IC=10A ... See More ⇒
Detailed specifications: SK2306, SK2307A, SK2310AA, SK50N06A, SKQ50N03BD, SKQ55P02AD, SGO100N08L, SGO4606T, AON7410, SGP100N45T, SSB65R360S2, SSI65R360S2, SSB80R380S, SSF50R140S, SSP50R140S, SSW50R140S, SSA50R140S
Keywords - SGT100N45T MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: ET6314 | 2SK3111-S | AS2303 | SUN0550D
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