All MOSFET. SGT100N45T Datasheet

 

SGT100N45T Datasheet and Replacement


   Type Designator: SGT100N45T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252
 

 SGT100N45T substitution

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SGT100N45T Datasheet (PDF)

 ..1. Size:878K  cn super semi
 sgt100n45t sgp100n45t.pdf pdf_icon

SGT100N45T

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N45T Rev. 1.0 Dec. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGT100N45T/SGP100N45T 100V N-Channel MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is VDS 100V ID (at Vgs=10V) 25A uniquely optimized to

 9.1. Size:328K  silan
 sgt10t60sd1s sgt10t60sd1str sgt10t60sd1f.pdf pdf_icon

SGT100N45T

SGT10T60SD1S/F 10A600V C2SGT10T60SD1S/F 1Field StopIIIG UPSSMPS PFC 3E 10A600VVCE(sat)()=1.65V@IC=10A

 9.2. Size:315K  silan
 sgt10t60sdm1p7.pdf pdf_icon

SGT100N45T

SGT10T60SDM1P7 10A600V C2SGT10T60SDM1P7 1Field StopIIIG UPSSMPS 3E 10A600VVCE(sat)()=1.65V@I

 9.3. Size:561K  silan
 sgt10u60sdm2d.pdf pdf_icon

SGT100N45T

SGT10U60SDM2D 10A600V C2SGT10U60SDM2D 4 PlusField Stop IV+ 1G UPS,SMPS PFC 3E 10A600VVCE(sat)( )=1.65V@ IC=10A

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Datasheet: SK2306 , SK2307A , SK2310AA , SK50N06A , SKQ50N03BD , SKQ55P02AD , SGO100N08L , SGO4606T , RFP50N06 , SGP100N45T , SSB65R360S2 , SSI65R360S2 , SSB80R380S , SSF50R140S , SSP50R140S , SSW50R140S , SSA50R140S .

History: SSB80R380S | SSB65R360S2

Keywords - SGT100N45T MOSFET datasheet

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