SSI65R360S2 Datasheet and Replacement
Type Designator: SSI65R360S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23.5 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: TO262
SSI65R360S2 substitution
SSI65R360S2 Datasheet (PDF)
ssb65r360s2 ssi65r360s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R360S2Rev. 1.4Dec. 2023www.supersemi.com.cnSSB65R360S2/SSI65R360S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
ssb65r360s2e ssi65r360s2e.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R360S2ERev. 1.2Nov. 2022www.supersemi.com.cnSSB65R360S2E/SSI65R360S2E650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
ssi65r190s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SSI65R190S2Rev. 1.0Mar. 2022www.supersemi.com.cnSSI65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge bal
Datasheet: SK50N06A , SKQ50N03BD , SKQ55P02AD , SGO100N08L , SGO4606T , SGT100N45T , SGP100N45T , SSB65R360S2 , TK10A60D , SSB80R380S , SSF50R140S , SSP50R140S , SSW50R140S , SSA50R140S , SSF50R240S , SSP50R240S , SSW50R240S .
History: BUZ32H3045A
Keywords - SSI65R360S2 MOSFET datasheet
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History: BUZ32H3045A
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