All MOSFET. SWT038R10ES Datasheet

 

SWT038R10ES Datasheet and Replacement


   Type Designator: SWT038R10ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 171 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-247
 

 SWT038R10ES substitution

   - MOSFET ⓘ Cross-Reference Search

 

SWT038R10ES Datasheet (PDF)

 ..1. Size:905K  samwin
 sw038r10es swb038r10es swp038r10es swt038r10es.pdf pdf_icon

SWT038R10ES

SW038R10ES N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET Features TO-263 TO-220 TO-247 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V RDS(ON) : 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 Application:Synchronous Rectification, 2 2 3 3 3 Inverter ,

 ..2. Size:677K  samwin
 swt038r10es.pdf pdf_icon

SWT038R10ES

SW038R10ES N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V Low Gate Charge (Typ 132nC) RDS(ON) : 3.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 2 Application:Synchronous Rectification, 3 Inverter , Li Battery Protect Board 1. Gate 2. Drain 3.

Datasheet: SSA50R140S , SSF50R240S , SSP50R240S , SSW50R240S , SSA50R240S , SWB035R08ET , SWB038R10ES , SWP038R10ES , STF13NM60N , SWH055R03VT , SWHA055R03VT , SWB075R06ET , SWP075R06ET , SWK088R06VT , SWI088R06VT , SWD088R06VT , SWHA088R06VT .

History: SFR9220 | IRFPS43N50KPBF | SMK0160D | NTB85N03 | IRHN57250SE | TPS1120Y | MMBF0201NLT1G

Keywords - SWT038R10ES MOSFET datasheet

 SWT038R10ES cross reference
 SWT038R10ES equivalent finder
 SWT038R10ES lookup
 SWT038R10ES substitution
 SWT038R10ES replacement

 

 
Back to Top

 


 
.